PROBLEM TO BE SOLVED: To provide a manufacturing method of a laminate structure in which a conductor between silicon carbide having a large thermal expansion coefficient and a metal is stably laminated, on a surface of a conductive silicon carbide sintered body while reducing contact resistance.SOLUTION: After forming a thermal expansion difference reducing layer 12 by laminating tungsten carbide containing nickel on a surface of a base 11 which is a conductive silicon carbide sintered body, heat treatment is performed in a non-oxidizing atmosphere to diffuse a portion of nickel from the thermal expansion difference reducing layer 12 to the substrate 11, and a phase 20 of silicon carbide containing nickel is formed in the neighborhood of a boundary surface with the thermal expansion difference reducing layer 12 in the base 11 (vicinity of a boundary line BL in a cross-section crossing with the boundary surface).SELECTED DRAWING: Figure 5

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